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- 437 bytes (70 words) - 13:44, 8 January 2011
- | pagename = Metal-oxide-semiconductor field-effect transistor | abc = Metal-oxide-semiconductor field-effect transistor889 bytes (68 words) - 12:03, 16 January 2011
- <noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connecte417 bytes (62 words) - 22:20, 10 April 2011
- 321 bytes (46 words) - 13:35, 4 January 2011
- 953 bytes (144 words) - 12:16, 18 June 2011
- {{r|Transistor}}1,021 bytes (158 words) - 10:01, 22 June 2011
- #REDIRECT [[Metal Oxide Semiconductor Field Effect Transistor/Definition]]74 bytes (8 words) - 13:35, 4 January 2011
- 286 bytes (42 words) - 13:43, 18 June 2011
- {{r|Transistor}}896 bytes (141 words) - 13:49, 8 January 2011
- | pagename = Metal Oxide Semi-conductor Field Effect Transistor | abc = Metal Oxide Semi-conductor Field Effect Transistor2 KB (332 words) - 00:49, 3 January 2011
Page text matches
- <noinclude>{{Subpages}}</noinclude>A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connecte417 bytes (62 words) - 22:20, 10 April 2011
- | '''number of transistors''' || 3,500 transistor on die<ref name=thocp1974-75/><ref name=IntelMuseum/> | '''transistor size''' || 10 micron<ref name=IntelMuseum/>2 KB (328 words) - 07:30, 18 March 2024
- A type of [[field effect|field-effect]] [[transistor]] with four electrical contacts and three layers: a metal top layer (connec418 bytes (61 words) - 22:21, 10 April 2011
- A type of [[field effect|field-effect]] [[transistor]] with four electrical contacts and three layers: a metal top layer (connec406 bytes (59 words) - 22:15, 10 April 2011
- | '''number of transistors''' || 2,300 transistor on die<ref name=thocp1974-75/><ref name=IntelMuseum/> | '''transistor size''' || 10 micron<ref name=IntelMuseum/>2 KB (284 words) - 12:03, 6 March 2024
- ...se current ''i<sub>B</sub>''. Thus, Kirchhoff's current law applied to the transistor as a whole provides the output current drawn through resistor ''R<sub>C</su ...e bipolar transistor ''i<sub>B</sub>'' is normally negligible provided the transistor remains in [[Mode (electronics)|active mode]]. That is, based upon the idea7 KB (1,178 words) - 10:49, 10 June 2011
- {{rpl|transistor}}514 bytes (62 words) - 21:36, 5 January 2024
- ...istor]] (MOSFET), present by the millions in [[integrated circuit]]s. This transistor was invented by Dawon Khang and Martin Atalla in 1960, another [[Bell Labor ...cheaper, require less power, and obtain faster switching times. The first transistor was made from materials that included a paper clip and a razor blade.5 KB (763 words) - 09:15, 4 May 2024
- | pagename = Metal Oxide Semiconductor Field Effect Transistor | abc = Metal Oxide Semiconductor Field Effect Transistor2 KB (335 words) - 13:52, 4 January 2011
- | pagename = Metal Oxide Semi-conductor Field Effect Transistor | abc = Metal Oxide Semi-conductor Field Effect Transistor2 KB (332 words) - 00:49, 3 January 2011
- ...toff mode''') and the '''on-mode''' (or '''saturation mode''' in [[bipolar transistor]]s, or '''ohmic mode''' for [[MOSFET]]'s), and visits the active mode only ...fers to its ''active mode'', while the ''saturation mode'' of the bipolar transistor invariably refers to its ''on'' mode. This confusion of terminology does no13 KB (2,277 words) - 12:22, 1 July 2011
- ...appropriate selection of the DC current source it can be arranged that the transistor is configured to operate usefully, that is, it is in [[Mode (electronics)|' ...<sub>in</sub>'' is applied to the base. The emitter-to-base voltage of the transistor is hardly affected by the signal, and remains very nearly at the quiescent7 KB (1,223 words) - 11:22, 26 May 2011
- {{r|Bipolar transistor}} {{r|Transistor}}3 KB (357 words) - 04:07, 22 November 2023
- {{r|Transistor}}896 bytes (141 words) - 13:49, 8 January 2011
- |Planar bipolar transistor.PNG|A planar bipolar junction transistor as might be constructed in a [[integrated circuit]]. ...PNG|Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.4 KB (525 words) - 04:07, 22 November 2023
- {{r|Bipolar transistor}}915 bytes (145 words) - 12:54, 4 June 2014
- {{r|Bipolar transistor}}933 bytes (147 words) - 11:30, 1 July 2011
- ...e-to-air missile]], and also was the first company to produce commercial [[transistor]]s.1 KB (152 words) - 19:15, 14 July 2009
- {{r|Bipolar transistor}}953 bytes (150 words) - 11:29, 1 July 2011
- It was the first [[semiconductor]] used to make commercial [[transistor]]s.914 bytes (138 words) - 20:58, 25 April 2011