View source for User:John R. Brews/Devices

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==Devices==
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|Two diode structures.PNG|Mesa diode structure (top) and planar diode structure with guard-ring (bottom).
|Planar bipolar transistor.PNG|A planar bipolar junction transistor as might be constructed in a [[integrated circuit]].
|Gummel plot.PNG|Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.
|Diode quasi-fermi levels.PNG|Quasi-Fermi levels and carrier densities in forward biased ''pn-''diode.
|MOS Capacitor.PNG|Cross section of MOS capacitor showing charge layers
|MOS CV curves.PNG|Three types of MOS capacitance ''vs.'' voltage curves. ''V<sub>TH</sub>''&nbsp;<nowiki>=</nowiki>&nbsp;threshold, ''V<sub>FB</sub>''&nbsp;<nowiki>=</nowiki>&nbsp;flatbands&nbsp;
|MOS equivqlent circuit.PNG|Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level
|MOSFET junction structure.PNG|A modern MOSFET 
|UMOSFET.PNG|A power MOSFET; source and body share a contact.
|Early effect.PNG|Two bipolar transistor modes, showing extrapolation of asymptotes to the Early voltage.
|Channel length modulation.PNG|Channel length modulation in 3/4&mu;m technology.
|Early voltage for 0.18mu process.PNG|Early voltage for MOSFETs from a 0.18&mu;m process as a function of channel strength.
|Silicon density of states.PNG|Calculated density of states for crystalline silicon.
|Seimiconductor band bending.PNG|''Field effect'': At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.
|Fermi levels.PNG|Occupancy comparison between n-type, intrinsic and p-type semiconductors.
|Nonideal diode current-voltage behavior.PNG|Nonideal ''pn''-diode current-voltage characteristics
|Pn-junction zero bias.PNG|Band-bending diagram for ''pn''-junction diode at zero applied voltage
|Pn-junction reverse bias.PNG|Band-bending for ''pn''-diode in reverse bias
|Quasi-Fermi levels.PNG|Quasi-Fermi levels in reverse-biased ''pn''-junction diode
|Pn-junction forward bias.PNG|Band-bending diagram for pn-diode in forward bias
|Fermi function.PNG|Fermi occupancy function ''vs''. energy departure from Fermi level in volts for three temperatures
|FCC Fermi surface.PNG|Fermi surface in '''k'''-space for a nearly filled band in the face-centered cubic lattice
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==More devices==
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|Silicon conduction band ellipsoids.JPG|A constant energy surface in the silicon conduction band consists of six ellipsoids.
|Planar Schottky diode.PNG|Planar Schottky diode with ''n<sup>+</sup>''-guard rings and tapered oxide.
|Schottky & pn diode IV curves.PNG|Comparison of Schottky and ''pn''-diode current voltage curves.
|Schottky barrier height.PNG|Schottky barrier formation on ''p''-type semiconductor. Energies are in eV.
|Schottky barrier (forward bias).PNG|Schottky diode under forward bias ''V<sub>F</sub>''.
|Schottky barrier (reverse bias).PNG|Schottky diode under reverse bias ''V<sub>R</sub>''.
|Breakdown field vs bandgap.PNG|Critical electric field for breakdown ''versus'' bandgap energy in several materials.
|Schottky barrier vs. electronegativity.PNG|Schottky barrier height ''vs.'' metal electronegativity for some selected metals on ''n''-type silicon. 
|Schottky barrier on p-SiC.PNG|Theoretical dependence of Schottky barrier heights for diodes using ''p''-SiC ''vs.'' electronegativity of the metal according to Mönch
|Three-phase CCD.PNG||Three phase CCD. ''Top'': illumination ''Bottom'': Charge transfer}}
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