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User:John R. Brews/Devices

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Devices

Devices
Mesa diode structure (top) and planar diode structure with guard-ring (bottom).
(PD) Image: John R. Brews
Mesa diode structure (top) and planar diode structure with guard-ring (bottom).
A planar bipolar junction transistor as might be constructed in a integrated circuit.
(PD) Image: John R. Brews
A planar bipolar junction transistor as might be constructed in a integrated circuit.
Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.
(PD) Image: John R. Brews
Gummel plot and current gain for a GaAs/AlGaAs heterostructure bipolar transistor.
Quasi-Fermi levels and carrier densities in forward biased pn-diode.
(PD) Image: John R. Brews
Quasi-Fermi levels and carrier densities in forward biased pn-diode.
Cross section of MOS capacitor showing charge layers
(PD) Image: John R. Brews
Cross section of MOS capacitor showing charge layers
Three types of MOS capacitance vs. voltage curves. VTH = threshold, VFB = flatbands 
(PD) Image: John R. Brews
Three types of MOS capacitance vs. voltage curves. VTH = threshold, VFB = flatbands 
Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level
(PD) Image: John R. Brews
Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level
A modern MOSFET
(PD) Image: John R. Brews
A modern MOSFET
A power MOSFET; source and body share a contact.
(PD) Image: John R. Brews
A power MOSFET; source and body share a contact.
Two bipolar transistor modes, showing extrapolation of asymptotes to the Early voltage.
(PD) Image: John R. Brews
Two bipolar transistor modes, showing extrapolation of asymptotes to the Early voltage.
Channel length modulation in 3/4μm technology.
(PD) Image: John R. Brews
Channel length modulation in 3/4μm technology.
Early voltage for MOSFETs from a 0.18μm process as a function of channel strength.
(PD) Image: John R. Brews
Early voltage for MOSFETs from a 0.18μm process as a function of channel strength.
Calculated density of states for crystalline silicon.
(CC) Image: John R. Brews
Calculated density of states for crystalline silicon.
Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.
(CC) Image: John R. Brews
Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.
Occupancy comparison between n-type, intrinsic and p-type semiconductors.
(PD) Image: John R. Brews
Occupancy comparison between n-type, intrinsic and p-type semiconductors.
Nonideal pn-diode current-voltage characteristics
(PD) Image: John R. Brews
Nonideal pn-diode current-voltage characteristics
Band-bending diagram for pn-junction diode at zero applied voltage
(PD) Image: John R. Brews
Band-bending diagram for pn-junction diode at zero applied voltage
Band-bending for pn-diode in reverse bias
(PD) Image: John R. Brews
Band-bending for pn-diode in reverse bias
Quasi-Fermi levels in reverse-biased pn-junction diode
(PD) Image: John R. Brews
Quasi-Fermi levels in reverse-biased pn-junction diode
Band-bending diagram for pn-diode in forward bias
(PD) Image: John R. Brews
Band-bending diagram for pn-diode in forward bias
Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures
(PD) Image: John R. Brews
Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures
Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice
(PD) Image: John R. Brews
Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice
Electron probabilities in lowest two quantum states of a 160Ǻ GaAs quantum well in a GaAs-GaAlAs quantum heterostructure.
(PD) Image: John R. Brews
Electron probabilities in lowest two quantum states of a 160Ǻ GaAs quantum well in a GaAs-GaAlAs quantum heterostructure.

More devices

More devices
A constant energy surface in the silicon conduction band consists of six ellipsoids.
(PD) Image: John R. Brews
A constant energy surface in the silicon conduction band consists of six ellipsoids.
Planar Schottky diode with n+-guard rings and tapered oxide.
(PD) Image: John R. Brews
Planar Schottky diode with n+-guard rings and tapered oxide.
Comparison of Schottky and pn-diode current voltage curves.
(PD) Image: John R. Brews
Comparison of Schottky and pn-diode current voltage curves.
Schottky barrier formation on p-type semiconductor. Energies are in eV.
(PD) Image: John R. Brews
Schottky barrier formation on p-type semiconductor. Energies are in eV.
Schottky diode under forward bias VF.
(PD) Image: John R. Brews
Schottky diode under forward bias VF.
Schottky diode under reverse bias VR.
(PD) Image: John R. Brews
Schottky diode under reverse bias VR.
Critical electric field for breakdown versus bandgap energy in several materials.
(PD) Image: John R. Brews
Critical electric field for breakdown versus bandgap energy in several materials.
Schottky barrier height vs. metal electronegativity for some selected metals on n-type silicon.
(PD) Image: John R. Brews
Schottky barrier height vs. metal electronegativity for some selected metals on n-type silicon.
Theoretical dependence of Schottky barrier heights for diodes using p-SiC vs. electronegativity of the metal according to Mönch
(PD) Image: John R. Brews
Theoretical dependence of Schottky barrier heights for diodes using p-SiC vs. electronegativity of the metal according to Mönch
Three phase CCD. Top: illumination Bottom: Charge transfer
(PD) Image: John R. Brews
Three phase CCD. Top: illumination Bottom: Charge transfer