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  • The '''Schottky diode''' is a two-terminal device consisting of conductive ''gate'' (for example, The modern theory of Schottky diode operation was contributed by [http://nobelprize.org/nobel_prizes/physics/la
    31 KB (4,880 words) - 08:51, 25 October 2013
  • 12 bytes (1 word) - 16:47, 1 February 2011
  • | pagename = Schottky diode | abc = Schottky diode
    817 bytes (66 words) - 16:47, 1 February 2011
  • 205 bytes (27 words) - 09:15, 13 June 2011
  • ...ublisher=World Scientific}} A thorough and authoritative discussion of the Schottky diode and its historical development by a pioneer in the field of semiconductor e
    1 KB (143 words) - 12:23, 9 February 2011
  • 996 bytes (155 words) - 09:18, 13 June 2011

Page text matches

  • #REDIRECT [[Schottky diode]]
    28 bytes (3 words) - 13:35, 2 February 2011
  • #REDIRECT [[Schottky diode]]
    28 bytes (3 words) - 13:46, 8 February 2011
  • #REDIRECT [[Schottky diode]]
    28 bytes (3 words) - 10:17, 7 April 2011
  • | pagename = Schottky diode | abc = Schottky diode
    817 bytes (66 words) - 16:47, 1 February 2011
  • {{r|Schottky diode}}
    374 bytes (47 words) - 01:18, 11 April 2011
  • |Planar Schottky diode.PNG|Planar Schottky diode with ''n<sup>+</sup>''-guard rings and tapered oxide. |Schottky barrier (forward bias).PNG|Schottky diode under forward bias ''V<sub>F</sub>''.
    4 KB (525 words) - 04:07, 22 November 2023
  • {{r|Schottky diode}}
    1,013 bytes (158 words) - 09:12, 13 June 2011
  • ...ublisher=World Scientific}} A thorough and authoritative discussion of the Schottky diode and its historical development by a pioneer in the field of semiconductor e
    1 KB (143 words) - 12:23, 9 February 2011
  • {{r|Schottky diode}}
    908 bytes (144 words) - 12:58, 11 February 2011
  • {{r|Schottky diode}}
    1 KB (158 words) - 23:09, 12 February 2011
  • {{r|Schottky diode}}
    1 KB (161 words) - 10:02, 22 June 2011
  • {{r|Schottky diode}}
    1 KB (169 words) - 09:11, 13 June 2011
  • ...cy or a large degree of chemical inertness. It is employed in high power [[Schottky diode]]s.
    1 KB (184 words) - 13:38, 2 February 2011
  • {{r|Schottky diode}}
    3 KB (357 words) - 04:07, 22 November 2023
  • {{r|Schottky diode}}: See particularly [[Schottky_diode#Barrier_height|Barrier height]].
    2 KB (246 words) - 16:13, 1 April 2011
  • |Planar Schottky diode.PNG|Planar Schottky diode with ''n<sup>+</sup>''-guard rings and tapered oxide. |Schottky barrier (forward bias).PNG|Schottky diode under forward bias ''V<sub>F</sub>''.
    19 KB (2,805 words) - 04:07, 22 November 2023
  • The '''Schottky diode''' is a two-terminal device consisting of conductive ''gate'' (for example, The modern theory of Schottky diode operation was contributed by [http://nobelprize.org/nobel_prizes/physics/la
    31 KB (4,880 words) - 08:51, 25 October 2013
  • *Schottky diode: The [[Schottky diode]] is made using a metal such as [[aluminium]] or platinum, on a lightly dop
    23 KB (3,734 words) - 07:29, 12 September 2013
  • ...ore appropriate for applications involving layers of materials, like the [[Schottky diode]], than the electronegativity scale of Pauling based upon covalent bonds in
    5 KB (784 words) - 11:38, 11 February 2011
  • ...ed the ''field effect''. The field effect underlies the operation of the [[Schottky diode]] and of ''field effect transistors'', notably the [[MOSFET]] the [[JFET]]
    11 KB (1,755 words) - 13:05, 2 February 2011
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