Metal Oxide Semiconductor Field Effect Transistor: Difference between revisions

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#REDIRECT [[Metal-oxide-semiconductor field-effect transistor]]
 
The '''Metal Oxide Semi-conductor Field Effect Transistor''' (MOSFET) is a type of [[Field Effect Transistor|FET]] that consists of three layers: [[semi-conductor]] (called bulk), oxide (working as insulator) and metal (conductor, called gate). There are two nodes on opposite sides of the device called source and drain, though the transistor is symmetrical so they can swap their functions. The current between source and drain depends non-linearly on voltage differences between parts of the transistor: gate to source (Vgs), drain to source (Vds) and bulk to source (Vbs).
 
The structure of the transistor is similar to the one of [[Metal Oxide Semi-conductor Capacitor|MOS Capacitor]].

Latest revision as of 12:06, 16 January 2011

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