User:John R. Brews

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Revision as of 12:19, 8 January 2011 by imported>John R. Brews
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I am a Professor Emeritus of Electrical Engineering from The University of Arizona, where I taught device physics and circuit design for just under two decades. Previously, I was a research scientist for twenty-odd years at Bell Laboratories, Murray Hill, doing theoretical work in the areas of solid-state physics and device physics. I also am a Fellow of the IEEE, and a recipient of the Electron Device Society distinguished service award for work as Editor-in-chief of the journal IEEE Electron Device Letters, founded by Nobel prize winner George E. Smith. I've published a number of technical books and papers, some of which may be found at this link.


Images

Magnetism
B-field lines near uniformly magnetized sphere
(CC) Image: John R. Brews
B-field lines near uniformly magnetized sphere
Magnetic flux density vs. magnetic field in steel and iron
(CC) Image: John R. Brews
Magnetic flux density vs. magnetic field in steel and iron
Widlar current source
Widlar current source using bipolar transistors
(CC) Image: John R. Brews
Widlar current source using bipolar transistors
Small-signal circuit for finding output resistance of the Widlar source
(CC) Image: John R. Brews
Small-signal circuit for finding output resistance of the Widlar source
Design trade-off between output resistance and output current in Widlar source
(CC) Image: John R. Brews
Design trade-off between output resistance and output current in Widlar source
Forces
Force and its equivalent force and couple
(CC) Image: John R. Brews
Force and its equivalent force and couple
Electromagnetism
Electric motor using a current loop in a magnetic flux density, labeled B
(CC) Image: John R. Brews
Electric motor using a current loop in a magnetic flux density, labeled B
Devices
A modern MOSFET
(PD) Image: John R. Brews
A modern MOSFET
Calculated density of states for crystalline silicon.
(CC) Image: John R. Brews
Calculated density of states for crystalline silicon.
A narrow, surface inversion layer of electrons forms at large enough positive gate voltages. The horizontal dashed line indicates the Fermi level that divides occupied energy levels from empty ones at zero temperature.
(CC) Image: John R. Brews
A narrow, surface inversion layer of electrons forms at large enough positive gate voltages. The horizontal dashed line indicates the Fermi level that divides occupied energy levels from empty ones at zero temperature.
Occupancy comparison between n-type, intrinsic and p-type semiconductors.
(PD) Image: John R. Brews
Occupancy comparison between n-type, intrinsic and p-type semiconductors.