User:John R. Brews

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I am a Professor Emeritus of Electrical Engineering from The University of Arizona, where I taught device physics and circuit design for just under two decades. Previously, I was a research scientist for twenty-odd years at Bell Laboratories, Murray Hill, doing theoretical work in the areas of solid-state physics and device physics. I also am a Fellow of the IEEE, and a recipient of the Electron Device Society distinguished service award for work as Editor-in-chief of the journal IEEE Electron Device Letters, founded by Nobel prize winner George E. Smith. I've published a number of technical books and papers, some of which may be found at this link.

Images

Magnetism

(CC) Image: John R. Brews B-field lines near uniformly magnetized sphere     (CC) Image: John R. Brews Magnetic flux density vs. magnetic field in steel and iron

Widlar current source

(CC) Image: John R. Brews Widlar current source using bipolar transistors     (CC) Image: John R. Brews Small-signal circuit for finding output resistance of the Widlar source     (CC) Image: John R. Brews Design trade-off between output resistance and output current in Widlar source

Forces

(CC) Image: John R. Brews Force and its equivalent force and couple

Electromagnetism

(CC) Image: John R. Brews Electric motor using a current loop in a magnetic flux density, labeled B

Devices

(PD) Image: John R. Brews Cross section of MOS capacitor showing charge layers     (PD) Image: John R. Brews Three types of MOS capacitance vs. voltage curves. VTH = threshold, VFB = flatbands      (PD) Image: John R. Brews Small-signal equivalent circuit of the MOS capacitor in inversion with a single trap level     (PD) Image: John R. Brews A modern MOSFET     (PD) Image: John R. Brews A power MOSFET; source and body share a contact.     (CC) Image: John R. Brews Calculated density of states for crystalline silicon.     (CC) Image: John R. Brews Field effect: At a gate voltage above threshold a surface inversion layer of electrons forms at a semiconductor surface.     (PD) Image: John R. Brews Occupancy comparison between n-type, intrinsic and p-type semiconductors.     (PD) Image: John R. Brews Nonideal pn-diode current-voltage characteristics     (PD) Image: John R. Brews Band-bending diagram for pn-junction diode at zero applied voltage     (PD) Image: John R. Brews Band-bending for pn-diode in reverse bias     (PD) Image: John R. Brews Quasi-Fermi levels in reverse-biased pn-junction diode     (PD) Image: John R. Brews Band-bending diagram for pn-diode in forward bias     (PD) Image: John R. Brews Fermi occupancy function vs. energy departure from Fermi level in volts for three temperatures     (PD) Image: John R. Brews Fermi surface in k-space for a nearly filled band in the face-centered cubic lattice     (PD) Image: John R. Brews A constant energy surface in the silicon conduction band consists of six ellipsoids.     (PD) Image: John R. Brews Planar Schottky diode with n+-guard rings and tapered oxide.     (PD) Image: John R. Brews Comparison of Schottky and pn-diode current voltage curves.     (PD) Image: John R. Brews Schottky barrier formation on p-type semiconductor. Energies are in eV.     (PD) Image: John R. Brews Under forward bias VF the Schottky barrier height is reduced and the Fermi levels are split.     (PD) Image: John R. Brews Schottky diode under reverse bias VR. Critical electric field for breakdown versus bandgap energy in several materials.     Critical electric field for breakdown versus bandgap energy in several materials.